High quality silicon epitaxy at 500°C using silane gas-source molecular beam technique

Fumihiko Hirose, Maki Suemitsu, Nobuo Miyamoto

Research output: Contribution to journalArticle

43 Citations (Scopus)

Fingerprint Dive into the research topics of 'High quality silicon epitaxy at 500°C using silane gas-source molecular beam technique'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy