High quality pentacene film formation on N-doped LaB6 donor layer

Yasutaka Maeda, Shun Ichiro Ohmi, Tetsuya Goto, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

In this research, we have investigated the deposition condition of pentacene film on nitrogen doped (N-doped) LaB6 donor layer for larger grain growth at the channel region for bottom-contact type pentacene-based organic field-effect transistors (OFETs) to improve the device characteristics. Source and drain bottom-contacts of Al were patterned and 2 nm-thick N-doped LaB6 donor layer was deposited on the SiO2/Si(100) back-gate structure. The dendritic grain growth of pentacene larger than 10 μm without lamellar grain growth was demonstrated when the deposition temperature and rate were 100°C and 0.5 nm/min, respectively. Furthermore, it was found that the dendritic grain growth was realized at the boundary region of bottom-contact as well as channel region.

Original languageEnglish
Pages (from-to)535-540
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE99C
Issue number5
DOIs
Publication statusPublished - 2016 May

Keywords

  • Bottom-contact
  • Dendritic grain
  • LaB
  • Lamellar grain
  • OFET
  • Pentacene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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