High-quality p-type ZnO films grown by Co-doping of N and Te on Zn-face ZnO substrates

Seunghwan Park, Tsutomu Minegishi, Dongcheol Oh, Hyunjae Lee, Toshinori Taishi, Jinsub Park, Mina Jung, Jiho Chang, Inho Im, Junseok Ha, Soonku Hong, Ichiro Yonenaga, Toyohiro Chikyo, Takafumi Yao

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39 Citations (Scopus)


This article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) codoping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4 × 1016 cm-3, while ZnO:N shows n-type conduction. The photoluminescence of ZnO:N shows broad bound exciton emission lines. Meanwhile, ZnO:[N+Te] layers show dominant A0X emission line at 3.359 eV, with a linewidth as narrow as 1.2 meV. Its X-ray linewidth shows narrower line width of 30 arcsec. Detailed investigation of photoluminescence properties of (N+Te) codoped ZnO layers suggest that the binding energy of N acceptors lies in a range of 121- 157 meV.

Original languageEnglish
Article number031103
JournalApplied Physics Express
Issue number3
Publication statusPublished - 2010 Mar 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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