High quality p-type ZnO film grown on ZnO substrate by nitrogen and tellurium co-doping

S. H. Park, T. Minegishi, J. S. Park, H. J. Lee, T. Taish, Ichiro Yonenaga, D. C. Oh, M. N. Jung, J. H. Chang, S. K. Hong, T. Yao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nitrogen and tellurium co-doped ZnO (ZnO:[N+Te]) films have been grown on (0001) ZnO substrate by plasma-assisted molecular beam epitaxy. The electron concentration of tellurium doped ZnO (ZnO:Te) gradually increases, compared with that of undoped ZnO (u-ZnO). On the other hand, conductivity of ZnO:[N+Te] changes from n-type to p-type characteristic with a hole concentration of 4×1016 cm-3. However, nitrogen doped ZnO film (ZnO:N) still remains as n-type conductivity with an electron concentration of 2.5×1017 cm-3. Secondary ion mass spectroscopy reveals that nitrogen concentration ([N]) of ZnO:[N+Te] film (2×10 21 cm-3) is relatively higher than that of ZnO:N film (3×1020 cm-3). 10 K photoluminescence spectra show that considerable improvement of emission properties of ZnO:[N+Te] with an emergence of narrow acceptor bound exciton (A°X, 3.359 eV) and donor-acceptor pair (DAP, 3.217 eV), compared with those of u-ZnO. Consequently, high quality p-type ZnO with high N concentration is realized by using Te and N co-doping technique due to reduction of Madelung energy.

Original languageEnglish
Title of host publicationZinc Oxide and Related Materials - 2009
Pages127-133
Number of pages7
Publication statusPublished - 2010 Jul 1
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: 2009 Nov 302009 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1201
ISSN (Print)0272-9172

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period09/11/3009/12/4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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