High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal

Cheng Xin Wang, Guo Wei Yang, Tie Chen Zhang, Hong Wu Liu, Yong Hao Han, Ji Feng Luo, Chun Xiao Gao, Guang Tian Zou

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

An investigation was carried out on high-quality hetrojunction between p-type diamond single crystal film and n-type cubic boron nitride bulk single crystal. Cubic boron nitride bulk single crystals with low resistivity was prepared using a simple surface diffusion. A high quality heterojunction bipolar p-n diode was fabricated by combining diamond films grown by chemical vapor deposition with cubic boron nitride. The turn-on voltage of the device was found to be lower and the current density much higher compared to other diodes.

Original languageEnglish
Pages (from-to)4854-4856
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number23
DOIs
Publication statusPublished - 2003 Dec 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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