High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

doi:10.1063/1.4719099

High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

Akira Wada, Rui Zhang, Shinichi Takagi, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

High-quality germanium dioxide (GeO ₂) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO ₂ thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO ₂ thin films (equivalent oxide thickness (EOT) 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 10 ¹¹cm ^-2eV ^-1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.

Original language	English
Article number	213108
Journal	Applied Physics Letters
Volume	100
Issue number	21
DOIs	https://doi.org/10.1063/1.4719099
Publication status	Published - 2012 May 21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{b83870e7e37f45e9835c2d8b70a2b0a1,

title = "High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process",

abstract = "High-quality germanium dioxide (GeO 2) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO 2 thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO 2 thin films (equivalent oxide thickness (EOT) 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 10 11cm -2eV -1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.",

author = "Akira Wada and Rui Zhang and Shinichi Takagi and Seiji Samukawa",

year = "2012",

month = may,

day = "21",

doi = "10.1063/1.4719099",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

AU - Wada, Akira

AU - Zhang, Rui

AU - Takagi, Shinichi

AU - Samukawa, Seiji

PY - 2012/5/21

Y1 - 2012/5/21

N2 - High-quality germanium dioxide (GeO 2) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO 2 thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO 2 thin films (equivalent oxide thickness (EOT) 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 10 11cm -2eV -1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.

AB - High-quality germanium dioxide (GeO 2) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO 2 thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO 2 thin films (equivalent oxide thickness (EOT) 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 10 11cm -2eV -1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.

UR - http://www.scopus.com/inward/record.url?scp=84861793589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861793589&partnerID=8YFLogxK

U2 - 10.1063/1.4719099

DO - 10.1063/1.4719099

M3 - Article

AN - SCOPUS:84861793589

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 213108

ER -