Abstract
High-quality germanium dioxide (GeO 2) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO 2 thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO 2 thin films (equivalent oxide thickness (EOT) 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 10 11cm -2eV -1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.
Original language | English |
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Article number | 213108 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2012 May 21 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)