High quality diamond formation by electron temperature control in methane-hydrogen plasma

Tetsuji Shimizu, Satoru Iizuka, Kohgi Kato, Noriyoshi Sato

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

We report a new method for the nucleation and growth of diamonds by employing an electron-temperature control technique in CH4/H2 radio frequency glow discharge plasma under a low gas pressure of 100 mTorr. The electron temperature in the plasma is controlled under constant gas pressure in a range from 0.5 to 2.5 eV continuously by changing the open area of the slits situated around a grid that is kept at the floating potential. It is observed that the film quality is changed in accordance with the variation of electron temperature, and we can produce high quality diamond in a low electron temperature plasma, even though usually only graphite film is deposited, unless the electron temperature is controlled.

Original languageEnglish
Pages (from-to)S21-S25
JournalPlasma Sources Science and Technology
Volume12
Issue number4
DOIs
Publication statusPublished - 2003 Nov 1

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'High quality diamond formation by electron temperature control in methane-hydrogen plasma'. Together they form a unique fingerprint.

Cite this