High-quality AlN layer homoepitaxially grown on nitrided a-plane sapphire using a Ga-Al flux

Masayoshi Adachi, Kenji Tsuda, Masashi Sugiyama, Junji Iida, Akikazu Tanaka, Hiroyuki Fukuyama

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We previously grew AlN layers with in-plane rotational domains on nitrided c-plane sapphire substrates using a Ga-Al flux method. In this study, we successfully grew rotational-domain-free AlN layers using nitrided a-plane sapphire substrates. The full width at half maximum values of the X-ray rocking curves of (0002) and (1012) of the AlN layer were 90 and 392 arcsec, respectively. From the results of transmission electron microscopy, edge-type dislocations were observed to be dominant in the layer. Convergent-beam electron diffraction revealed the occurrence of polarity inversion at the interface between the AlN layer and the nitrided sapphire.

Original languageEnglish
Article number091001
JournalApplied Physics Express
Volume6
Issue number9
DOIs
Publication statusPublished - 2013 Sep

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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