Abstract
A high quality β-FeSi2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 film grown with stoichiometric Fe / Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods. X-ray diffraction (XRD) spectra confirmed that the obtained β-FeSi2 film was single crystal. Scanning electron microscope (SEM) images showed a good morphology with large flat surface areas of the obtained β-FeSi2 film.
Original language | English |
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Pages (from-to) | 2370-2373 |
Number of pages | 4 |
Journal | Materials Letters |
Volume | 59 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2005 Aug |
Externally published | Yes |
Keywords
- Epitaxial growth
- MBE
- Semiconductor
- β-FeSi
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering