High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

S. Y. Ji; G. M. Lalev; J. F. Wang; M. Uchikoshi; M. Isshiki

doi:10.1016/j.matlet.2005.01.088

High quality β-FeSi₂ epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

S. Y. Ji, G. M. Lalev, J. F. Wang, M. Uchikoshi, M. Isshiki

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A high quality β-FeSi₂ epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi₂ film grown with stoichiometric Fe / Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods. X-ray diffraction (XRD) spectra confirmed that the obtained β-FeSi₂ film was single crystal. Scanning electron microscope (SEM) images showed a good morphology with large flat surface areas of the obtained β-FeSi₂ film.

Original language	English
Pages (from-to)	2370-2373
Number of pages	4
Journal	Materials Letters
Volume	59
Issue number	18
DOIs	https://doi.org/10.1016/j.matlet.2005.01.088
Publication status	Published - 2005 Aug
Externally published	Yes

Keywords

Epitaxial growth
MBE
Semiconductor
β-FeSi

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2005.01.088

Cite this

@article{20702d34612042108e277024e269dc48,

title = "High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy",

abstract = "A high quality β-FeSi2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 film grown with stoichiometric Fe / Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods. X-ray diffraction (XRD) spectra confirmed that the obtained β-FeSi2 film was single crystal. Scanning electron microscope (SEM) images showed a good morphology with large flat surface areas of the obtained β-FeSi2 film.",

keywords = "Epitaxial growth, MBE, Semiconductor, β-FeSi",

author = "Ji, {S. Y.} and Lalev, {G. M.} and Wang, {J. F.} and M. Uchikoshi and M. Isshiki",

note = "Funding Information: This research was partially supported by the Ministry of Education, Science, Sportsand Culture, Grant-in-Aid Scientific Research, 14350394, (2003).",

year = "2005",

month = aug,

doi = "10.1016/j.matlet.2005.01.088",

language = "English",

volume = "59",

pages = "2370--2373",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "18",

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TY - JOUR

T1 - High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

AU - Ji, S. Y.

AU - Lalev, G. M.

AU - Wang, J. F.

AU - Uchikoshi, M.

AU - Isshiki, M.

N1 - Funding Information: This research was partially supported by the Ministry of Education, Science, Sportsand Culture, Grant-in-Aid Scientific Research, 14350394, (2003).

PY - 2005/8

Y1 - 2005/8

N2 - A high quality β-FeSi2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 film grown with stoichiometric Fe / Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods. X-ray diffraction (XRD) spectra confirmed that the obtained β-FeSi2 film was single crystal. Scanning electron microscope (SEM) images showed a good morphology with large flat surface areas of the obtained β-FeSi2 film.

AB - A high quality β-FeSi2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 film grown with stoichiometric Fe / Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods. X-ray diffraction (XRD) spectra confirmed that the obtained β-FeSi2 film was single crystal. Scanning electron microscope (SEM) images showed a good morphology with large flat surface areas of the obtained β-FeSi2 film.

KW - Epitaxial growth

KW - MBE

KW - Semiconductor

KW - β-FeSi

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DO - 10.1016/j.matlet.2005.01.088

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VL - 59

SP - 2370

EP - 2373

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

IS - 18

ER -