High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

S. Y. Ji, G. M. Lalev, J. F. Wang, M. Uchikoshi, M. Isshiki

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

A high quality β-FeSi2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 film grown with stoichiometric Fe / Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods. X-ray diffraction (XRD) spectra confirmed that the obtained β-FeSi2 film was single crystal. Scanning electron microscope (SEM) images showed a good morphology with large flat surface areas of the obtained β-FeSi2 film.

Original languageEnglish
Pages (from-to)2370-2373
Number of pages4
JournalMaterials Letters
Volume59
Issue number18
DOIs
Publication statusPublished - 2005 Aug
Externally publishedYes

Keywords

  • Epitaxial growth
  • MBE
  • Semiconductor
  • β-FeSi

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'High quality β-FeSi<sub>2</sub> epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this