High P1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8GHz ETC terminals

Shintaro Shinjo, Hiro Omi Ueda, Takayuki Sugano, Masahiko Nakanishi, Masahiro Inoue, Noriharu Suematsu

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

A 5.8GHz high P1dB and low quiescent current SiGe HBT three-stage power amplifier (PA) MMIC using a self base bias control circuit is described. The self base bias control circuits are applied to the second and the final stage PA's, and automatically control the base current/voltage according to the output power level. As a result, high P1dB is obtained at a low quiescent current condition. The simulated results show that the proposed three-stage PA MMIC achieves P1dB improvement of 1.7dB compared with a conventional PA using a constant base voltage bias circuit at the same quiescent current condition. The fabricated PA MMIC achieves P 1dB of 15.3dBm, gain of 19.6dB with the quiescent current of 22.2mA at 5.8GHz.

Original languageEnglish
Pages195-198
Number of pages4
Publication statusPublished - 2003 Aug 22
Externally publishedYes
Event2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Philadelphia, PA, United States
Duration: 2003 Jun 82003 Jun 10

Other

Other2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CityPhiladelphia, PA
Period03/6/803/6/10

ASJC Scopus subject areas

  • Engineering(all)

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    Shinjo, S., Ueda, H. O., Sugano, T., Nakanishi, M., Inoue, M., & Suematsu, N. (2003). High P1dB and low quiescent current SiGe HBT power amplifier MMIC using self base bias control circuit for 5.8GHz ETC terminals. 195-198. Paper presented at 2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Philadelphia, PA, United States.