High pressure synthesis of binary B-S compounds

T. Sasaki; Hirotsugu Takizawa; K. Uheda; T. Endo

doi:10.1002/1521-3951(200101)223:1<29::AID-PSSB29>3.0.CO;2-O

High pressure synthesis of binary B-S compounds

T. Sasaki, Hirotsugu Takizawa, K. Uheda, T. Endo

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Abstract

r-BS was synthesized under high pressure/temperature conditions. Rietveld analysis of the powder X-ray diffraction data was performed by applying the structure model of GaS 3R (space group: R3m) with the lattice parameters of a_hex = 3.05223(7) Åand a_hex = 20.4119(5) ÅThe crystal structure of r-BS was revealed to be the three-layer structure comprised of the units built up from B-B pairs which are inside the anti-prism of S atoms. The measurement of UV-Vis diffused reflectance spectrum showed that the estimated band gap of r-BS was about 3.4 eV, and the coloring of r-BS was observed as broad absorption at 510 nm.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	223
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200101)223:1<29::AID-PSSB29>3.0.CO;2-O
Publication status	Published - 2001 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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AU - Takizawa, Hirotsugu

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AU - Endo, T.

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High pressure synthesis of binary B-S compounds

Abstract

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