The new germanium-rich manganese germanide, Mn3Ge5, was synthesized at 600-1000°C and 4 GPa using a Belt-type apparatus. The crystal structure of Mn3Ge5 was identified as possessing the Mn11Si19 type with a tetragonal cell (Schoenflies symbolD2d). The electrical resistivity of Mn3Ge5 increased with increasing temperature and saturated above 200 K. The thermoelectric power was 50-70 μV/K and its sign was positive. These data indicated that Mn3Ge5 was ap-type semiconductor or a semimetal.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Physical and Theoretical Chemistry
- Inorganic Chemistry
- Materials Chemistry