High-pressure synthesis and electrical properties of Mn3Ge5 with Mn11Si19-type structure

H. Takizawa, T. Sato, T. Endo, M. Shimada

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28 Citations (Scopus)

Abstract

The new germanium-rich manganese germanide, Mn3Ge5, was synthesized at 600-1000°C and 4 GPa using a Belt-type apparatus. The crystal structure of Mn3Ge5 was identified as possessing the Mn11Si19 type with a tetragonal cell (Schoenflies symbolD2d). The electrical resistivity of Mn3Ge5 increased with increasing temperature and saturated above 200 K. The thermoelectric power was 50-70 μV/K and its sign was positive. These data indicated that Mn3Ge5 was ap-type semiconductor or a semimetal.

Original languageEnglish
Pages (from-to)234-238
Number of pages5
JournalJournal of Solid State Chemistry
Volume68
Issue number2
DOIs
Publication statusPublished - 1987 Jun

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

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