High-pressure Raman spectroscopy study of LiGaO2

Li Lei; Hiroaki Ohfuji; Jiaqian Qin; Xinyu Zhang; Fulong Wang; Tetsuo Irifune

doi:10.1016/j.ssc.2013.03.030

High-pressure Raman spectroscopy study of LiGaO₂

Li Lei, Hiroaki Ohfuji, Jiaqian Qin, Xinyu Zhang, Fulong Wang, Tetsuo Irifune

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The high-pressure phase transitions and Raman phonon behaviors of LiGaO₂ were investigated by high-pressure Raman spectroscopy and first-principle calculations. The β-LiGaO₂ was evidenced to undergo irreversible phase transitions to Raman silent γ-LiGaO₂ at ∼14 GPa, and the high-pressure phase transition from α- to δ-phase was found to be kinetically sluggish at room temperature. In addition, mode-Grüneisen parameters, bulk modulus, and pressure dependence of Raman phonon frequencies LiGaO₂ were also determined.

Original language	English
Pages (from-to)	6-10
Number of pages	5
Journal	Solid State Communications
Volume	164
DOIs	https://doi.org/10.1016/j.ssc.2013.03.030
Publication status	Published - 2013 Jun
Externally published	Yes

Keywords

A. Semiconductors
B. High-pressure
C. Structure
E. Raman spectroscopy

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2013.03.030

Cite this

@article{ec23831a8fbc4068b7c90f49422101e6,

title = "High-pressure Raman spectroscopy study of LiGaO2",

abstract = "The high-pressure phase transitions and Raman phonon behaviors of LiGaO2 were investigated by high-pressure Raman spectroscopy and first-principle calculations. The β-LiGaO2 was evidenced to undergo irreversible phase transitions to Raman silent γ-LiGaO2 at ∼14 GPa, and the high-pressure phase transition from α- to δ-phase was found to be kinetically sluggish at room temperature. In addition, mode-Gr{\"u}neisen parameters, bulk modulus, and pressure dependence of Raman phonon frequencies LiGaO2 were also determined.",

keywords = "A. Semiconductors, B. High-pressure, C. Structure, E. Raman spectroscopy",

author = "Li Lei and Hiroaki Ohfuji and Jiaqian Qin and Xinyu Zhang and Fulong Wang and Tetsuo Irifune",

note = "Funding Information: This work was supported by Ehime University and Sichuan University . X. Zhang acknowledges funding from the National Natural Science Foundation of China under Grant no. 51002130 .",

year = "2013",

month = jun,

doi = "10.1016/j.ssc.2013.03.030",

language = "English",

volume = "164",

pages = "6--10",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - High-pressure Raman spectroscopy study of LiGaO2

AU - Lei, Li

AU - Ohfuji, Hiroaki

AU - Qin, Jiaqian

AU - Zhang, Xinyu

AU - Wang, Fulong

AU - Irifune, Tetsuo

N1 - Funding Information: This work was supported by Ehime University and Sichuan University . X. Zhang acknowledges funding from the National Natural Science Foundation of China under Grant no. 51002130 .

PY - 2013/6

Y1 - 2013/6

N2 - The high-pressure phase transitions and Raman phonon behaviors of LiGaO2 were investigated by high-pressure Raman spectroscopy and first-principle calculations. The β-LiGaO2 was evidenced to undergo irreversible phase transitions to Raman silent γ-LiGaO2 at ∼14 GPa, and the high-pressure phase transition from α- to δ-phase was found to be kinetically sluggish at room temperature. In addition, mode-Grüneisen parameters, bulk modulus, and pressure dependence of Raman phonon frequencies LiGaO2 were also determined.

AB - The high-pressure phase transitions and Raman phonon behaviors of LiGaO2 were investigated by high-pressure Raman spectroscopy and first-principle calculations. The β-LiGaO2 was evidenced to undergo irreversible phase transitions to Raman silent γ-LiGaO2 at ∼14 GPa, and the high-pressure phase transition from α- to δ-phase was found to be kinetically sluggish at room temperature. In addition, mode-Grüneisen parameters, bulk modulus, and pressure dependence of Raman phonon frequencies LiGaO2 were also determined.

KW - A. Semiconductors

KW - B. High-pressure

KW - C. Structure

KW - E. Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84877919016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877919016&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2013.03.030

DO - 10.1016/j.ssc.2013.03.030

M3 - Article

AN - SCOPUS:84877919016

SN - 0038-1098

VL - 164

SP - 6

EP - 10

JO - Solid State Communications

JF - Solid State Communications

ER -