High pressure effects on the Raman spectrum of CsC60 polymer

J. Arvanitidis; K. Papagelis; I. Tsilika; G. Kanellis; S. Ves; G. A. Kourouklis; K. Tanigaki; K. Prassides

doi:10.1016/S0921-4526(98)01382-9

High pressure effects on the Raman spectrum of CsC₆₀ polymer

J. Arvanitidis, K. Papagelis, I. Tsilika, G. Kanellis, S. Ves, G. A. Kourouklis, K. Tanigaki, K. Prassides

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The effect of high pressure (up to 11 GPa) on the phonon modes of o-CsC₆₀ polymer has been studied by means of Raman spectroscopy. The pressure dependence of all the observed phonon frequencies exhibits reversible changes in the pressure region 4.3 ± 0.5 GPa. The width of the H_g(8) mode increases almost linearly with increasing pressure up to approx. 4.3 GPa, above which it seems to remain constant. All the above changes may be related to the metal-insulator transition observed below 50 K for the material under investigation and/or with the structural changes, induced by pressure and observed also by X-ray diffraction measurements.

Original language	English
Pages (from-to)	234-238
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	265
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(98)01382-9
Publication status	Published - 1999 Apr 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "High pressure effects on the Raman spectrum of CsC60 polymer",

abstract = "The effect of high pressure (up to 11 GPa) on the phonon modes of o-CsC60 polymer has been studied by means of Raman spectroscopy. The pressure dependence of all the observed phonon frequencies exhibits reversible changes in the pressure region 4.3 ± 0.5 GPa. The width of the Hg(8) mode increases almost linearly with increasing pressure up to approx. 4.3 GPa, above which it seems to remain constant. All the above changes may be related to the metal-insulator transition observed below 50 K for the material under investigation and/or with the structural changes, induced by pressure and observed also by X-ray diffraction measurements.",

author = "J. Arvanitidis and K. Papagelis and I. Tsilika and G. Kanellis and S. Ves and Kourouklis, {G. A.} and K. Tanigaki and K. Prassides",

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T1 - High pressure effects on the Raman spectrum of CsC60 polymer

AU - Arvanitidis, J.

AU - Papagelis, K.

AU - Tsilika, I.

AU - Kanellis, G.

AU - Ves, S.

AU - Kourouklis, G. A.

AU - Tanigaki, K.

AU - Prassides, K.

PY - 1999/4/2

Y1 - 1999/4/2

N2 - The effect of high pressure (up to 11 GPa) on the phonon modes of o-CsC60 polymer has been studied by means of Raman spectroscopy. The pressure dependence of all the observed phonon frequencies exhibits reversible changes in the pressure region 4.3 ± 0.5 GPa. The width of the Hg(8) mode increases almost linearly with increasing pressure up to approx. 4.3 GPa, above which it seems to remain constant. All the above changes may be related to the metal-insulator transition observed below 50 K for the material under investigation and/or with the structural changes, induced by pressure and observed also by X-ray diffraction measurements.

AB - The effect of high pressure (up to 11 GPa) on the phonon modes of o-CsC60 polymer has been studied by means of Raman spectroscopy. The pressure dependence of all the observed phonon frequencies exhibits reversible changes in the pressure region 4.3 ± 0.5 GPa. The width of the Hg(8) mode increases almost linearly with increasing pressure up to approx. 4.3 GPa, above which it seems to remain constant. All the above changes may be related to the metal-insulator transition observed below 50 K for the material under investigation and/or with the structural changes, induced by pressure and observed also by X-ray diffraction measurements.

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