High-power SLM operation of 1·3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate

Y. Suzuki, H. Nagai, Y. Noguchi, T. Matsuoka, K. Kurumada

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.

Original languageEnglish
Pages (from-to)881-882
Number of pages2
JournalElectronics Letters
Volume20
Issue number21
DOIs
Publication statusPublished - 1984 Oct 11
Externally publishedYes

Keywords

  • Lasers and laser applications
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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