High-power rf oscillation induced in half-metallic Co2MnSi layer by spin-transfer torque

R. Okura, Y. Sakuraba, T. Seki, K. Izumi, M. Mizuguchi, K. Takanashi

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26 Citations (Scopus)


The rf oscillation induced in a current-perpendicular-to-plane device with Co2MnSi (CMS) layers by spin-transfer torque was investigated to enhance the rf output power due to the large magnetoresistance (MR) ratio. A large MR ratio of 12.5 was obtained due to the large spin-polarization of CMS, and fundamental and second harmonic rf oscillations were clearly observed in the CMS layer. A high rf output power of 1.1 nW was achieved in spite of a small precession angle of 8.6.

Original languageEnglish
Article number052510
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2011 Aug 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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