High-power organic field-effect transistors using a three-dimensional structure

M. Uno, Y. Hirose, K. Nakayama, T. Uemura, Y. Nakazawa, K. Takimiya, J. Takeya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three-dimensional organic field-effect transistors with multiple sub-micrometer channels are developed to exhibit high current density and high switching speed. The sub-micrometer channels are arranged perpendicularly to substrates and are defined by the height of a multi-columnar structure fabricated without using electron-beam-lithography technique. For devices with dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 200 ns are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized widi organic semiconductors.

Original languageEnglish
Title of host publicationOrganic Photovoltaics and Related Electronics - From Excitons to Devices
PublisherMaterials Research Society
Pages161-166
Number of pages6
ISBN (Print)9781605112473
DOIs
Publication statusPublished - 2010 Jan 1
Externally publishedYes

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1270
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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