TY - GEN
T1 - High-power normally-off GaN MOSFET
AU - Kambayashi, H.
AU - Satoh, Y.
AU - Kokawa, T.
AU - Ikeda, N.
AU - Nomura, T.
AU - Kato, S.
AU - Teramoto, A.
AU - Sugawa, S.
AU - Ohmi, T.
PY - 2011
Y1 - 2011
N2 - The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO2 and GaN, a high breakdown field, and a high reliability of SiO2 by annealing after SiO2 deposition on GaN. The SiO2 was applied for the gate oxide of GaN MOSFET. The fabricated GaN MOSFETs using an ion implantation technique showed good normally-off operation with threshold voltage of 2.7 V, the maximum output current of over 3.5 A, and a high-temperature operation up to 300°C Furthermore, AlGaN/GaN hybrid MOS-HFETs were fabricated. The MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases. The maximum drain current of over 100 A was performed. The specific on-state resistance was 9.3 mΩ-cm2. The fabricated device also exhibited good normally-off operation and the breakdown voltage of over 600 V.
AB - The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO2 and GaN, a high breakdown field, and a high reliability of SiO2 by annealing after SiO2 deposition on GaN. The SiO2 was applied for the gate oxide of GaN MOSFET. The fabricated GaN MOSFETs using an ion implantation technique showed good normally-off operation with threshold voltage of 2.7 V, the maximum output current of over 3.5 A, and a high-temperature operation up to 300°C Furthermore, AlGaN/GaN hybrid MOS-HFETs were fabricated. The MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases. The maximum drain current of over 100 A was performed. The specific on-state resistance was 9.3 mΩ-cm2. The fabricated device also exhibited good normally-off operation and the breakdown voltage of over 600 V.
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U2 - 10.1149/1.3631488
DO - 10.1149/1.3631488
M3 - Conference contribution
AN - SCOPUS:84857272466
SN - 9781566779081
T3 - ECS Transactions
SP - 87
EP - 100
BT - Gallium Nitride and Silicon Carbide Power Technologies
PB - Electrochemical Society Inc.
T2 - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting
Y2 - 9 October 2011 through 14 October 2011
ER -