TY - GEN
T1 - High-power normally-off GaN MOSFET
AU - Kambayashi, H.
AU - Satoh, Y.
AU - Kokawa, T.
AU - Ikeda, N.
AU - Nomura, T.
AU - Kato, S.
AU - Teramoto, A.
AU - Sugawa, S.
AU - Ohmi, T.
PY - 2011/12/1
Y1 - 2011/12/1
N2 - The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO 2 and GaN, a high breakdown field, and a high reliability of SiO 2 by annealing after SiO 2 deposition on GaN. The SiO 2 was applied for the gate oxide of GaN MOSFET. The fabricated GaN MOSFETs using an ion implantation technique showed good normally-off operation with threshold voltage of 2.7 V, the maximum output current of over 3.5 A, and a high-temperature operation up to 300°C Furthermore, AlGaN/GaN hybrid MOS-HFETs were fabricated. The MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases. The maximum drain current of over 100 A was performed. The specific on-state resistance was 9.3 mΩ-cm 2. The fabricated device also exhibited good normally-off operation and the breakdown voltage of over 600 V.
AB - The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO 2 and GaN, a high breakdown field, and a high reliability of SiO 2 by annealing after SiO 2 deposition on GaN. The SiO 2 was applied for the gate oxide of GaN MOSFET. The fabricated GaN MOSFETs using an ion implantation technique showed good normally-off operation with threshold voltage of 2.7 V, the maximum output current of over 3.5 A, and a high-temperature operation up to 300°C Furthermore, AlGaN/GaN hybrid MOS-HFETs were fabricated. The MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases. The maximum drain current of over 100 A was performed. The specific on-state resistance was 9.3 mΩ-cm 2. The fabricated device also exhibited good normally-off operation and the breakdown voltage of over 600 V.
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U2 - 10.1149/1.3631488
DO - 10.1149/1.3631488
M3 - Conference contribution
AN - SCOPUS:84857272466
SN - 9781566779081
T3 - ECS Transactions
SP - 87
EP - 100
BT - Gallium Nitride and Silicon Carbide Power Technologies
T2 - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting
Y2 - 9 October 2011 through 14 October 2011
ER -