High-power normally-off GaN MOSFET

H. Kambayashi, Y. Satoh, T. Kokawa, N. Ikeda, T. Nomura, S. Kato, A. Teramoto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO2 and GaN, a high breakdown field, and a high reliability of SiO2 by annealing after SiO2 deposition on GaN. The SiO2 was applied for the gate oxide of GaN MOSFET. The fabricated GaN MOSFETs using an ion implantation technique showed good normally-off operation with threshold voltage of 2.7 V, the maximum output current of over 3.5 A, and a high-temperature operation up to 300°C Furthermore, AlGaN/GaN hybrid MOS-HFETs were fabricated. The MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases. The maximum drain current of over 100 A was performed. The specific on-state resistance was 9.3 mΩ-cm2. The fabricated device also exhibited good normally-off operation and the breakdown voltage of over 600 V.

Original languageEnglish
Title of host publicationGallium Nitride and Silicon Carbide Power Technologies
PublisherElectrochemical Society Inc.
Pages87-100
Number of pages14
Edition8
ISBN (Electronic)9781607682622
ISBN (Print)9781566779081
DOIs
Publication statusPublished - 2011
EventGallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number8
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherGallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting
Country/TerritoryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

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