High-power normally-off GaN MOSFET

H. Kambayashi, Y. Satoh, T. Kokawa, N. Ikeda, T. Nomura, S. Kato, A. Teramoto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO 2 and GaN, a high breakdown field, and a high reliability of SiO 2 by annealing after SiO 2 deposition on GaN. The SiO 2 was applied for the gate oxide of GaN MOSFET. The fabricated GaN MOSFETs using an ion implantation technique showed good normally-off operation with threshold voltage of 2.7 V, the maximum output current of over 3.5 A, and a high-temperature operation up to 300°C Furthermore, AlGaN/GaN hybrid MOS-HFETs were fabricated. The MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases. The maximum drain current of over 100 A was performed. The specific on-state resistance was 9.3 mΩ-cm 2. The fabricated device also exhibited good normally-off operation and the breakdown voltage of over 600 V.

Original languageEnglish
Title of host publicationGallium Nitride and Silicon Carbide Power Technologies
Pages87-100
Number of pages14
Edition8
DOIs
Publication statusPublished - 2011 Dec 1
EventGallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number8
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherGallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting
Country/TerritoryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

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