High-power and high-speed organic three-dimensional transistors with submicrometer channels

M. Uno, Y. Hirose, T. Uemura, K. Takimiya, Y. Nakazawa, J. Takeya

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Three-dimensional organic field-effect transistors with high current density and high switching speed are developed with multiple submicrometer channels arranged perpendicularly to substrates. The short channel length is defined by the height of a multicolumnar structure without an electron-beam-lithography process. For devices using dinaphtho [2,3-b: 2′, 3′ -f] thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/ cm2 and fast switching within 0.2 μs are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.

Original languageEnglish
Article number013301
JournalApplied Physics Letters
Volume97
Issue number1
DOIs
Publication statusPublished - 2010 Jul 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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