TY - JOUR
T1 - High photoluminescent property of low-melting Sn-doped phosphate glass
AU - Masai, Hirokazu
AU - Takahashi, Yoshihiro
AU - Fujiwara, Takumi
AU - Matsumoto, Syuji
AU - Yoko, Toshinobu
PY - 2010/8/1
Y1 - 2010/8/1
N2 - The authors report on the quantum efficiency (QE) of UV-excited photoluminescence measured in SnO-ZnO-P2O5 glass developed as rare earth (RE)-free material for light emitting diode (LED) applications; we report what is, to the best of our knowledge, the highest value of QE ever reported. It is notable that the QE value of the present RE-free glass (∼90%) is comparable to that of RE-doped glass. For future LED applications, we have emphasized that the low-melting glass will be one of the most industrially favorable inorganic materials to replace organic sealants that suffer degradation by strong LED irradiation.
AB - The authors report on the quantum efficiency (QE) of UV-excited photoluminescence measured in SnO-ZnO-P2O5 glass developed as rare earth (RE)-free material for light emitting diode (LED) applications; we report what is, to the best of our knowledge, the highest value of QE ever reported. It is notable that the QE value of the present RE-free glass (∼90%) is comparable to that of RE-doped glass. For future LED applications, we have emphasized that the low-melting glass will be one of the most industrially favorable inorganic materials to replace organic sealants that suffer degradation by strong LED irradiation.
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U2 - 10.1143/APEX.3.082102
DO - 10.1143/APEX.3.082102
M3 - Article
AN - SCOPUS:77955488570
SN - 1882-0778
VL - 3
JO - Applied Physics Express
JF - Applied Physics Express
IS - 8
M1 - 082102
ER -