High photoluminescent property of low-melting Sn-doped phosphate glass

Hirokazu Masai, Yoshihiro Takahashi, Takumi Fujiwara, Syuji Matsumoto, Toshinobu Yoko

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

The authors report on the quantum efficiency (QE) of UV-excited photoluminescence measured in SnO-ZnO-P2O5 glass developed as rare earth (RE)-free material for light emitting diode (LED) applications; we report what is, to the best of our knowledge, the highest value of QE ever reported. It is notable that the QE value of the present RE-free glass (∼90%) is comparable to that of RE-doped glass. For future LED applications, we have emphasized that the low-melting glass will be one of the most industrially favorable inorganic materials to replace organic sealants that suffer degradation by strong LED irradiation.

Original languageEnglish
Article number082102
JournalApplied Physics Express
Volume3
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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