High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

H. S. Song, S. L. Li, L. Gao, Y. Xu, K. Ueno, J. Tang, Y. B. Cheng, K. Tsukagoshi

Research output: Contribution to journalArticlepeer-review

250 Citations (Scopus)


Two-dimensional (2D) layered semiconductors are very promising for post-silicon ultrathin channels and flexible electronics due to the remarkable dimensional and mechanical properties. Besides molybdenum disulfide (MoS 2), the first recognized 2D semiconductor, it is also important to explore the wide spectrum of layered metal chalcogenides (LMCs) and to identify possible compounds with high performance. Here we report the fabrication of high-performance top-gated field-effect transistors (FETs) and related logic gates from monolayer tin disulfide (SnS2), a non-transition metal dichalcogenide. The measured carrier mobility of our monolayer devices reaches 50 cm2 V-1 s-1, much higher than that of the back-gated counterparts (∼1 cm2 V-1 s-1). Based on a direct-coupled FET logic technique, advanced Boolean logic gates and operations are also implemented, with a voltage gain of 3.5 and output swing of >90% for the NOT and NOR gates, respectively. The superior electrical and integration properties make monolayer SnS2 a strong candidate for next-generation atomic electronics.

Original languageEnglish
Pages (from-to)9666-9670
Number of pages5
Issue number20
Publication statusPublished - 2013 Oct 21
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)


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