High-performance three-terminal fin field-effect transistors fabricated by a combination of damage-free neutral-beam etching and neutral-beam oxidation

Akira Wada, Keisuke Sano, Masahiro Yonemoto, Kazuhiko Endo, Takashi Matsukawa, Meishoku Masahara, Satoshi Yamasaki, Seiji Samukawa

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

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