Three-terminal fin field-effect transistors (3T-FinFETs) were fabricated by neutral-beam oxidation (NBO) to form gate silicon dioxide (SiO2). The 3T-FinFET fabricated by NBO showed higher device performance-namely, a higher subthreshold slope and a higher effective mobility-than that fabricated by conventional thermal oxidation. It is considered that those improved subthreshold slope and mobility are due to the fact that the three-dimensional structure of a SiO2 film fabricated by NBO has a lower interfacial state density and a lower roughness than a similar structure fabricated by the conventional thermal oxidation of a SiO2 film. The reasons for the lower interfacial state density and lower roughness are the low temperature and lattice plane independence of NBO in comparison with conventional thermal oxidation processes.
ASJC Scopus subject areas
- Physics and Astronomy(all)