Abstract
We here report optimization of thin-film fabrication of 2-(4-ethyloctyl)dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (2-EO-DNTT), a soluble DNTT derivative, by spin-coating. The key to fabricate suitable thin films for high-performance TFTs is to control the nucleation and crystallites growth on the substrate during spin-coating; dropwise addition of the solution onto the spinning substrates enabled reproducible fabrication of such thin films, not only on the conventional Si/SiO2 substrate but also glass substrates with the gate dielectric consisting of AlOx/phosphonic acid self-assembled monolayers (SAMs). As a result, the present method realized fabrication of solution-processed TFTs with high mobility (>1.0 cm2 V−1 s−1), good environmental, operational, and thermal stability, and low-voltage operation (<3.0 V), all of which are mostly comparable to those of the vapor-processed parent DNTT-TFTs. These results clearly indicate that 2-EO-DNTT is the solution-processable alternative of DNTT.
Original language | English |
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Pages (from-to) | 68-76 |
Number of pages | 9 |
Journal | Organic Electronics |
Volume | 46 |
DOIs | |
Publication status | Published - 2017 Jul 1 |
Externally published | Yes |
Keywords
- Low voltage operation
- Organic thin-film transistors
- Solution process
- Stable transistors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering