High-performance silicon dioxide etching for less than 0.1-μm-high-aspect contact holes

Seiji Samukawa, Tomonori Mukai

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)


A radical control method is proposed, which achieves both etching-stop-free and microloading-free performance while maintaining a high etching rate and a high etching selectivity during 0.05μm-SiO2 contact-hole formation. The method allows the independent control of etching and polymerization through the selective generation of CF2 and CF3 radicals. An optimum balance between etching and polymerization in 0.05 μm diameter contact holes was achieved by controlling the flow ratio of C2F4/CF3I gas.

Original languageEnglish
Pages (from-to)166-171
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
Publication statusPublished - 2000 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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