High-performance silicon dioxide etching for less than 0.1-μm-high-aspect contact holes

Seiji Samukawa; Tomonori Mukai

doi:10.1116/1.591169

High-performance silicon dioxide etching for less than 0.1-μm-high-aspect contact holes

Seiji Samukawa, Tomonori Mukai

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

A radical control method is proposed, which achieves both etching-stop-free and microloading-free performance while maintaining a high etching rate and a high etching selectivity during 0.05μm-SiO₂ contact-hole formation. The method allows the independent control of etching and polymerization through the selective generation of CF₂ and CF₃ radicals. An optimum balance between etching and polymerization in 0.05 μm diameter contact holes was achieved by controlling the flow ratio of C₂F₄/CF₃I gas.

Original language	English
Pages (from-to)	166-171
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	1
DOIs	https://doi.org/10.1116/1.591169
Publication status	Published - 2000 Jan
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "A radical control method is proposed, which achieves both etching-stop-free and microloading-free performance while maintaining a high etching rate and a high etching selectivity during 0.05μm-SiO2 contact-hole formation. The method allows the independent control of etching and polymerization through the selective generation of CF2 and CF3 radicals. An optimum balance between etching and polymerization in 0.05 μm diameter contact holes was achieved by controlling the flow ratio of C2F4/CF3I gas.",

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AB - A radical control method is proposed, which achieves both etching-stop-free and microloading-free performance while maintaining a high etching rate and a high etching selectivity during 0.05μm-SiO2 contact-hole formation. The method allows the independent control of etching and polymerization through the selective generation of CF2 and CF3 radicals. An optimum balance between etching and polymerization in 0.05 μm diameter contact holes was achieved by controlling the flow ratio of C2F4/CF3I gas.

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High-performance silicon dioxide etching for less than 0.1-μm-high-aspect contact holes

Abstract

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