A radical control method is proposed, which achieves both etching-stop-free and microloading-free performance while maintaining a high etching rate and a high etching selectivity during 0.05μm-SiO2 contact-hole formation. The method allows the independent control of etching and polymerization through the selective generation of CF2 and CF3 radicals. An optimum balance between etching and polymerization in 0.05 μm diameter contact holes was achieved by controlling the flow ratio of C2F4/CF3I gas.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2000 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering