High-performance shape-anisotropy magnetic tunnel junctions down to 2.3 nm

B. Jinnai, J. Igarashi, K. Watanabe, T. Funatsu, Hideo Sato, S. Fukami, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show scalability down to 2.3 nm and high performance at single-digit nanometers of shape-anisotropy magnetic tunnel junctions (MTJs) employing a multilayered ferromagnetic structure. We reveal that a free layer with two ferromagnets separated by a MgO layer behaves as a single magnet at small device dimensions owing to magnetostatic coupling in addition to exchange coupling. This nature, in turn, leads to a notable performance increase of the MTJs in the single-digit-nm regime: thermal stability factor Δ of higher than 100 at room temperature; stable switching at temperatures of 150°C or higher; and spin-transfer torque (STT) switching with a dc voltage (intrinsic critical current IC0 of 8.5 μA) and with a 10-ns pulse below 1.0 V. Also, we find that switching efficiency (Δ/IC0) increases by a factor of three or more as the size decreases. The results show that the shape-anisotropy MTJ provides a route to high-density and high-performance STT-MRAMs in the era of the ultimate scaling.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages24.6.1-24.6.4
ISBN (Electronic)9781728188881
DOIs
Publication statusPublished - 2020 Dec 12
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 2020 Dec 122020 Dec 18

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/TerritoryUnited States
CityVirtual, San Francisco
Period20/12/1220/12/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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