High-Performance Self-Aligned SiGeC HBT with Selectively Grown Si 1-x-yGexCy Base by UHV/CVD

Katsuya Oda, Eiji Ohue, Isao Suzumura, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Si1-x-yGexCy selective epitaxial growth (SEG) was performed by cold-wall, ultrahigh-vacuum chemical vapor deposition, and the effects of incorporating C on the crystallinity of Si 1-x-yGexCy layers and the performance of a self-aligned SiGeC heterojunction bipolar transistor (HBT) were evaluated. A Si1-x-yGexCy, layer with good crystallinity was obtained by optimizing the growth conditions. Device performance was significantly improved by incorporating C, as a result of applying Si 1-x-yGexCy SEG to form the base of a self-aligned HBT. Fluctuations in device performance were suppressed by alleviating the lattice strain. Furthermore, since the B out diffusion could be suppressed by incorporating C, the cutoff frequency was able to be increased with almost the same base resistance. A maximum oscillation frequency of 174 GHz and an emitter coupled logic gate-delay time of 5.65 ps were obtained at a C content of 0.4%, which shows promise for future ultrahigh-speed communication systems.

Original languageEnglish
Pages (from-to)2213-2220
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 2003 Nov
Externally publishedYes


  • Crystallinity
  • Cutoff frequency
  • Emitter coupled logic (ECL)
  • Heterojunction bipolar transistor (HBT)
  • Maximum oscillation frequency
  • Selective epitaxial growth (SEG)
  • SiGeC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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