High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

Yao Jen Lee, Ta Chun Cho, Po Jung Sung, Kuo Hsing Kao, Fu Kuo Hsueh, Fu Ju Hou, Po Cheng Chen, Hsiu Chih Chen, Chien Ting Wu, Shu Han Hsu, Yi Ju Chen, Yao Ming Huang, Yun Fang Hou, Wen Hsien Huang, Chih Chao Yang, Bo Yuan Chen, Kun Lin Lin, Min Cheng Chen, Chang Hong Shen, Guo Wei HuangKun Ping Huang, Michael I. Current, Yiming Li, Seiji Samukawa, Wen Fa Wu, Jia Min Shieh, Tien Sheng Chao, Wen Kuan Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (Ion by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (Ion/Ioff107) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6.2.1-6.2.4
ISBN (Electronic)9781467398930
DOIs
Publication statusPublished - 2015 Feb 16
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 2015 Dec 72015 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period15/12/715/12/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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