High performance pMOSFETs with high Ge fraction strained SiGe-heterostructure-channel and ultrashallow source/drain formed by selective B-doped SiGe CVD

Shinobu Takehiro, Masao Sakuraba, Junichi Murota, Toshiaki Tsuchiya

Research output: Contribution to journalArticle

Abstract

The improvement of current drivability and short channel effect is very important for ultrasmall MOS devices technology. SiGe-channel pMOSFETs are one of the most promising devices because hole mobility in the SiGe layers is enhanced. In the previous work, it has been reported that Super self-aligned shallow junction electrode (S3E) MOSFETs formed by selective B-doped SiGe CVD are effective for the suppression of short channel effect. In this paper, it is clarified that the (S3E) pMOSFETs with Si 0.65Ge0.35-channel are realized not only with suppression of punch through due to the ultrashallow B-diffused source/drain but also with enhancement of maximum linear transconductance due to the low parasitic resistance, compared to that with the Si-channel fabricated by the same process conditions.

Original languageEnglish
JournalIEEJ Transactions on Electronics, Information and Systems
Volume126
Issue number9
Publication statusPublished - 2006 Jan 1

Keywords

  • High mobility
  • MOSFET
  • Punch through
  • Selective CVD growth
  • Shallow junction
  • SiGe epitaxial growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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