High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD

Shinobu Takehiro, Masao Sakuraba, Junichi Murota, Toshiaki Tsuchiya

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The improvement of current drivability and short-channel effect is very important for ultrasmall MOS device technology. SiGe-channel pMOSFETs are one of the most promising devices because hole mobility in the SiGe layers is enhanced. In the previous work, it has been reported that Super Self-aligned Shallow junction Electrode (S3E) MOSFETs formed by selective B-doped SiGe CVD are effective for the suppression of short-channel effect. In this paper, it is clarified that the (S3E) pMOSFETs with Si 0.65Ge0.35 channel are realized not only with suppression of punch-through due to the ultrashallow B-diffused source/drain but also with enhancement of maximum linear transconductance due to the low parasitic resistance, compared to that with the Si channel fabricated by the same process conditions.

Original languageEnglish
Pages (from-to)46-50
Number of pages5
JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
Volume165
Issue number3
DOIs
Publication statusPublished - 2008 Nov 30

Keywords

  • High mobility
  • Punch-through
  • Selective CVD growth: MOSFET
  • Shallow junction
  • SiGe epitaxial growth

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD'. Together they form a unique fingerprint.

Cite this