High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

W. Ou-Yang; T. Uemura; K. Miyake; S. Onish; T. Kato; M. Katayama; M. Kang; K. Takimiya; M. Ikeda; H. Kuwabara; M. Hamada; J. Takeya

doi:10.1063/1.4769436

High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

W. Ou-Yang, T. Uemura, K. Miyake, S. Onish, T. Kato, M. Katayama, M. Kang, K. Takimiya, M. Ikeda, H. Kuwabara, M. Hamada, J. Takeya

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al₂ O ₃ formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm²/ Vs in the crystalline C₁₀-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

Original language	English
Article number	223304
Journal	Applied Physics Letters
Volume	101
Issue number	22
DOIs	https://doi.org/10.1063/1.4769436
Publication status	Published - 2012 Nov 26
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Ou-Yang, W., Uemura, T., Miyake, K., Onish, S., Kato, T., Katayama, M., Kang, M., Takimiya, K., Ikeda, M., Kuwabara, H., Hamada, M., & Takeya, J. (2012). High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. Applied Physics Letters, 101(22), [223304]. https://doi.org/10.1063/1.4769436

High-performance organic transistors with high-k dielectrics : A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. / Ou-Yang, W.; Uemura, T.; Miyake, K.; Onish, S.; Kato, T.; Katayama, M.; Kang, M.; Takimiya, K.; Ikeda, M.; Kuwabara, H.; Hamada, M.; Takeya, J.

In: Applied Physics Letters, Vol. 101, No. 22, 223304, 26.11.2012.

Research output: Contribution to journal › Article › peer-review

Ou-Yang, W, Uemura, T, Miyake, K, Onish, S, Kato, T, Katayama, M, Kang, M, Takimiya, K, Ikeda, M, Kuwabara, H, Hamada, M & Takeya, J 2012, 'High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene', Applied Physics Letters, vol. 101, no. 22, 223304. https://doi.org/10.1063/1.4769436

Ou-Yang W, Uemura T, Miyake K, Onish S, Kato T, Katayama M et al. High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. Applied Physics Letters. 2012 Nov 26;101(22). 223304. https://doi.org/10.1063/1.4769436

Ou-Yang, W. ; Uemura, T. ; Miyake, K. ; Onish, S. ; Kato, T. ; Katayama, M. ; Kang, M. ; Takimiya, K. ; Ikeda, M. ; Kuwabara, H. ; Hamada, M. ; Takeya, J. / High-performance organic transistors with high-k dielectrics : A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. In: Applied Physics Letters. 2012 ; Vol. 101, No. 22.

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