High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

W. Ou-Yang; T. Uemura; K. Miyake; S. Onish; T. Kato; M. Katayama; M. Kang; K. Takimiya; M. Ikeda; H. Kuwabara; M. Hamada; J. Takeya

doi:10.1063/1.4769436

High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

W. Ou-Yang, T. Uemura, K. Miyake, S. Onish, T. Kato, M. Katayama, M. Kang, K. Takimiya, M. Ikeda, H. Kuwabara, M. Hamada, J. Takeya

Research output: Contribution to journal › Article › peer-review

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Abstract

High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al₂ O ₃ formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm²/ Vs in the crystalline C₁₀-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

Original language	English
Article number	223304
Journal	Applied Physics Letters
Volume	101
Issue number	22
DOIs	https://doi.org/10.1063/1.4769436
Publication status	Published - 2012 Nov 26
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Ou-Yang, W., Uemura, T., Miyake, K., Onish, S., Kato, T., Katayama, M., Kang, M., Takimiya, K., Ikeda, M., Kuwabara, H., Hamada, M., & Takeya, J. (2012). High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. Applied Physics Letters, 101(22), [223304]. https://doi.org/10.1063/1.4769436

High-performance organic transistors with high-k dielectrics : A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. / Ou-Yang, W.; Uemura, T.; Miyake, K.; Onish, S.; Kato, T.; Katayama, M.; Kang, M.; Takimiya, K.; Ikeda, M.; Kuwabara, H.; Hamada, M.; Takeya, J.

In: Applied Physics Letters, Vol. 101, No. 22, 223304, 26.11.2012.

Research output: Contribution to journal › Article › peer-review

Ou-Yang, W, Uemura, T, Miyake, K, Onish, S, Kato, T, Katayama, M, Kang, M, Takimiya, K, Ikeda, M, Kuwabara, H, Hamada, M & Takeya, J 2012, 'High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene', Applied Physics Letters, vol. 101, no. 22, 223304. https://doi.org/10.1063/1.4769436

Ou-Yang W, Uemura T, Miyake K, Onish S, Kato T, Katayama M et al. High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. Applied Physics Letters. 2012 Nov 26;101(22). 223304. https://doi.org/10.1063/1.4769436

Ou-Yang, W. ; Uemura, T. ; Miyake, K. ; Onish, S. ; Kato, T. ; Katayama, M. ; Kang, M. ; Takimiya, K. ; Ikeda, M. ; Kuwabara, H. ; Hamada, M. ; Takeya, J. / High-performance organic transistors with high-k dielectrics : A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. In: Applied Physics Letters. 2012 ; Vol. 101, No. 22.

@article{50f0fcd8475646898fa56628060d0a1a,

title = "High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene",

abstract = "High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.",

author = "W. Ou-Yang and T. Uemura and K. Miyake and S. Onish and T. Kato and M. Katayama and M. Kang and K. Takimiya and M. Ikeda and H. Kuwabara and M. Hamada and J. Takeya",

note = "Funding Information: We acknowledge the New Energy and Industrial Technology Developing Organization (NEDO), the Japan Science and Technology Agency (JST), and the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan for financial support.",

year = "2012",

month = nov,

day = "26",

doi = "10.1063/1.4769436",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - High-performance organic transistors with high-k dielectrics

T2 - A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

AU - Ou-Yang, W.

AU - Uemura, T.

AU - Miyake, K.

AU - Onish, S.

AU - Kato, T.

AU - Katayama, M.

AU - Kang, M.

AU - Takimiya, K.

AU - Ikeda, M.

AU - Kuwabara, H.

AU - Hamada, M.

AU - Takeya, J.

N1 - Funding Information: We acknowledge the New Energy and Industrial Technology Developing Organization (NEDO), the Japan Science and Technology Agency (JST), and the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan for financial support.

PY - 2012/11/26

Y1 - 2012/11/26

N2 - High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

AB - High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

UR - http://www.scopus.com/inward/record.url?scp=84870573523&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870573523&partnerID=8YFLogxK

U2 - 10.1063/1.4769436

DO - 10.1063/1.4769436

M3 - Article

AN - SCOPUS:84870573523

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 223304

ER -

High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

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