High performance normally-off GaN MOSFETs on Si substrates

H. Kambayashi, N. Ikeda, T. Nomura, H. Ueda, Y. Morozumi, K. Harada, K. Hasebe, Akinobu Teramoto, Shigetoshi Sugawa, T. Ohmi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The enhancement mode AlGaN/GaN hybrid MOS-HFETs on Si substrates have been demonstrated. The breakdown voltage of over 1.71 kV was achieved by investigating the epitaxial structure. Furthermore, a high integrity SiO 2/Al2O3 gate stack has been demonstrated for GaN MOSFETs. The SiO2 film formed on GaN by the MW-PECVD exhibits good properties compared that by the LP-CVD. Then, by incorporating the advantages of both of SiO2 with a high insulating characteristics and Al2O3 with good interface characteristics, the SiO 2/Al2O3 gate stack structure has been employed in GaN MOS devices. It is shown that a low interface state density between gate insulator and GaN, a high breakdown field, and a large charge-to-breakdown by applying 3-nm Al2O3 in this structure. The SiO 2/Al2O3 gate stack has also been applied to AlGaN/GaN hybrid MOS-HFET and excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 192 cm2/Vs are shown in the transistor.

Original languageEnglish
Pages (from-to)155-166
Number of pages12
JournalECS Transactions
Volume58
Issue number4
DOIs
Publication statusPublished - 2013 Jan 1

ASJC Scopus subject areas

  • Engineering(all)

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