Abstract
Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm2 V-1 s-1 in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.
Original language | English |
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Pages (from-to) | 7917-7923 |
Number of pages | 7 |
Journal | Journal of Materials Chemistry C |
Volume | 4 |
Issue number | 34 |
DOIs | |
Publication status | Published - 2016 |
Externally published | Yes |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Chemistry