High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Yu Wang, Takio Kizu, Lei Song, Yujia Zhang, Sai Jiang, Jun Qian, Qijing Wang, Yi Shi, Youdou Zheng, Toshihide Nabatame, Kazuhito Tsukagoshi, Yun Li

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm2 V-1 s-1 in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.

Original languageEnglish
Pages (from-to)7917-7923
Number of pages7
JournalJournal of Materials Chemistry C
Volume4
Issue number34
DOIs
Publication statusPublished - 2016
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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