Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm2 V-1 s-1 in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.
ASJC Scopus subject areas
- Materials Chemistry