High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Yu Wang; Takio Kizu; Lei Song; Yujia Zhang; Sai Jiang; Jun Qian; Qijing Wang; Yi Shi; Youdou Zheng; Toshihide Nabatame; Kazuhito Tsukagoshi; Yun Li

doi:10.1039/c6tc01768a

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Yu Wang, Takio Kizu, Lei Song, Yujia Zhang, Sai Jiang, Jun Qian, Qijing Wang, Yi Shi, Youdou Zheng, Toshihide Nabatame, Kazuhito Tsukagoshi, Yun Li

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm² V^-1 s^-1 in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.

Original language	English
Pages (from-to)	7917-7923
Number of pages	7
Journal	Journal of Materials Chemistry C
Volume	4
Issue number	34
DOIs	https://doi.org/10.1039/c6tc01768a
Publication status	Published - 2016
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

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High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer. / Wang, Yu; Kizu, Takio; Song, Lei; Zhang, Yujia; Jiang, Sai; Qian, Jun; Wang, Qijing; Shi, Yi; Zheng, Youdou; Nabatame, Toshihide; Tsukagoshi, Kazuhito; Li, Yun.

In: Journal of Materials Chemistry C, Vol. 4, No. 34, 2016, p. 7917-7923.

Research output: Contribution to journal › Article › peer-review

Wang, Yu ; Kizu, Takio ; Song, Lei ; Zhang, Yujia ; Jiang, Sai ; Qian, Jun ; Wang, Qijing ; Shi, Yi ; Zheng, Youdou ; Nabatame, Toshihide ; Tsukagoshi, Kazuhito ; Li, Yun. / High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer. In: Journal of Materials Chemistry C. 2016 ; Vol. 4, No. 34. pp. 7917-7923.

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title = "High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer",

abstract = "Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm2 V-1 s-1 in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.",

author = "Yu Wang and Takio Kizu and Lei Song and Yujia Zhang and Sai Jiang and Jun Qian and Qijing Wang and Yi Shi and Youdou Zheng and Toshihide Nabatame and Kazuhito Tsukagoshi and Yun Li",

note = "Funding Information: This study is supported partially by 973 projects (No. 2013CBA01600 and 2013CB932900), NSFC (No. 61574074 and 61306021), NSFJS (No. BK20130579), Grants-in-Aid for Scientific Research (No. 15H03568 and 26790051), and Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098). Publisher Copyright: {\textcopyright} 2016 The Royal Society of Chemistry.",

year = "2016",

doi = "10.1039/c6tc01768a",

language = "English",

volume = "4",

pages = "7917--7923",

journal = "Journal of Materials Chemistry C",

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TY - JOUR

T1 - High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

AU - Wang, Yu

AU - Kizu, Takio

AU - Song, Lei

AU - Zhang, Yujia

AU - Jiang, Sai

AU - Qian, Jun

AU - Wang, Qijing

AU - Shi, Yi

AU - Zheng, Youdou

AU - Nabatame, Toshihide

AU - Tsukagoshi, Kazuhito

AU - Li, Yun

N1 - Funding Information: This study is supported partially by 973 projects (No. 2013CBA01600 and 2013CB932900), NSFC (No. 61574074 and 61306021), NSFJS (No. BK20130579), Grants-in-Aid for Scientific Research (No. 15H03568 and 26790051), and Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098). Publisher Copyright: © 2016 The Royal Society of Chemistry.

PY - 2016

Y1 - 2016

N2 - Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm2 V-1 s-1 in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.

AB - Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm2 V-1 s-1 in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.

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DO - 10.1039/c6tc01768a

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JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 34

ER -

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

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