High-performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique

Myung Ho Jung; Goon Ho Park; Tomohiro Yoshida; Hirokazu Fukidome; Tetsuya Suemitsu; Taiichi Otsuji; Maki Suemitsu

doi:10.1109/JPROC.2013.2258651

High-performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique

Myung Ho Jung, Goon Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Self-aligned source/drain (S/D) graphene fieldeffect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication processwithout sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm²/Vs, the gate leakage current of 10 ^-10-10^-9 A and the contact resistance of 412 ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length (L_G = 3 μm), which demonstrates the promising future of this self-aligned GFET.

Original language	English
Article number	6517475
Pages (from-to)	1603-1608
Number of pages	6
Journal	Proceedings of the IEEE
Volume	101
Issue number	7
DOIs	https://doi.org/10.1109/JPROC.2013.2258651
Publication status	Published - 2013

Keywords

Access length
graphene
graphene transistors
high performance
self-align

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/JPROC.2013.2258651

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High-performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique. / Jung, Myung Ho; Park, Goon Ho; Yoshida, Tomohiro; Fukidome, Hirokazu ; Suemitsu, Tetsuya ; Otsuji, Taiichi; Suemitsu, Maki.

In: Proceedings of the IEEE, Vol. 101, No. 7, 6517475, 2013, p. 1603-1608.

Research output: Contribution to journal › Article › peer-review

@article{bccd9f4944774717b2cf80d195f10267,

title = "High-performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique",

abstract = "Self-aligned source/drain (S/D) graphene fieldeffect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication processwithout sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm2/Vs, the gate leakage current of 10 -10-10-9 A and the contact resistance of 412 ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length (LG = 3 μm), which demonstrates the promising future of this self-aligned GFET.",

keywords = "Access length, graphene, graphene transistors, high performance, self-align",

author = "Jung, {Myung Ho} and Park, {Goon Ho} and Tomohiro Yoshida and Hirokazu Fukidome and Tetsuya Suemitsu and Taiichi Otsuji and Maki Suemitsu",

year = "2013",

doi = "10.1109/JPROC.2013.2258651",

language = "English",

volume = "101",

pages = "1603--1608",

journal = "Proceedings of the Institute of Radio Engineers",

issn = "0018-9219",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - High-performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique

AU - Jung, Myung Ho

AU - Park, Goon Ho

AU - Yoshida, Tomohiro

AU - Fukidome, Hirokazu

AU - Suemitsu, Tetsuya

AU - Otsuji, Taiichi

AU - Suemitsu, Maki

PY - 2013

Y1 - 2013

N2 - Self-aligned source/drain (S/D) graphene fieldeffect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication processwithout sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm2/Vs, the gate leakage current of 10 -10-10-9 A and the contact resistance of 412 ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length (LG = 3 μm), which demonstrates the promising future of this self-aligned GFET.

AB - Self-aligned source/drain (S/D) graphene fieldeffect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication processwithout sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm2/Vs, the gate leakage current of 10 -10-10-9 A and the contact resistance of 412 ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length (LG = 3 μm), which demonstrates the promising future of this self-aligned GFET.

KW - Access length

KW - graphene

KW - graphene transistors

KW - high performance

KW - self-align

UR - http://www.scopus.com/inward/record.url?scp=84879889507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879889507&partnerID=8YFLogxK

U2 - 10.1109/JPROC.2013.2258651

DO - 10.1109/JPROC.2013.2258651

M3 - Article

AN - SCOPUS:84879889507

VL - 101

SP - 1603

EP - 1608

JO - Proceedings of the Institute of Radio Engineers

JF - Proceedings of the Institute of Radio Engineers

SN - 0018-9219

IS - 7

M1 - 6517475

ER -

High-performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique

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Keywords

ASJC Scopus subject areas

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