Abstract
Self-aligned source/drain (S/D) graphene fieldeffect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication processwithout sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm2/Vs, the gate leakage current of 10 -10-10-9 A and the contact resistance of 412 ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length (LG = 3 μm), which demonstrates the promising future of this self-aligned GFET.
Original language | English |
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Article number | 6517475 |
Pages (from-to) | 1603-1608 |
Number of pages | 6 |
Journal | Proceedings of the IEEE |
Volume | 101 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2013 Jan 1 |
Keywords
- Access length
- graphene
- graphene transistors
- high performance
- self-align
ASJC Scopus subject areas
- Electrical and Electronic Engineering