High-performance didodecylbenzothienobenzothiophene-based top-gate organic transistors processed by spin coating using binary solvent mixtures

Shoya Sanda, Takashi Nagase, Takashi Kobayashi, Kazuo Takimiya, Yuichi Sadamitsu, Hiroyoshi Naito

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We have investigated the effect of organic solvents that are used for spin coating 2,7-didodecyl[1]benzothieno[3,2-b][1]benzothiophene (C12-BTBT) on the electrical characteristics of organic field-effect transistors (OFETs) having a top-gate/bottom-contact configuration to develop high-performance OFETs with simplified solution processes. It is found that spin coating C12-BTBT using binary solvent mixtures comprising toluene and high-boiling point solvents such as p-xylene and mesitylene allows the production of large polycrystalline domains having well-ordered edge-on oriented structures. The solution-processed C12-BTBT OFET devices processed using the binary solvent mixtures exhibit high average field-effect mobilities of greater than 7 cm2 V−1 s−1, low average threshold voltages (Vth) of less than −1 V, and high maximum mobilities of approximately 10 cm2 V−1 s−1. Further, the devices exhibit good operational stabilities, and small Vth shifts of less than 0.5 V are observed after applying a gate bias stress of approximately −1 MV cm−1 for 104 s.

Original languageEnglish
Pages (from-to)306-312
Number of pages7
JournalOrganic Electronics
Volume58
DOIs
Publication statusPublished - 2018 Jul

Keywords

  • Binary solvent mixture
  • Didodecylbenzothienobenzothiophene
  • Organic field-effect transistors
  • Spin coating
  • Top-gate configuration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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