High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications

Y. J. Lee, T. C. Hong, F. K. Hsueh, P. J. Sung, C. Y. Chen, S. S. Chuang, T. C. Cho, S. Noda, Y. C. Tsou, K. H. Kao, C. T. Wu, T. Y. Yu, Y. L. Jian, C. J. Su, Y. M. Huang, W. H. Huang, B. Y. Chen, M. C. Chen, K. P. Huang, J. Y. LiM. J. Chen, Y. Li, S. Samukawa, W. F. Wu, G. W. Huang, J. M. Shieh, T. Y. Tseng, T. S. Chao, Y. H. Wang, W. K. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) Ion and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high Ion/Ioff ratio and low subthreshold swing (S.S. ∼ 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages33.5.1-33.5.4
ISBN (Electronic)9781509039012
DOIs
Publication statusPublished - 2017 Jan 31
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 2016 Dec 32016 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period16/12/316/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Lee, Y. J., Hong, T. C., Hsueh, F. K., Sung, P. J., Chen, C. Y., Chuang, S. S., Cho, T. C., Noda, S., Tsou, Y. C., Kao, K. H., Wu, C. T., Yu, T. Y., Jian, Y. L., Su, C. J., Huang, Y. M., Huang, W. H., Chen, B. Y., Chen, M. C., Huang, K. P., ... Yeh, W. K. (2017). High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 33.5.1-33.5.4). [7838535] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838535