High performance CMOS compatible bistable operation at extremely low supply voltage by a novel Si interband tunneling diode

K. Morita, H. Sorada, K. Morimoto, K. Yuki, S. Yoshii, M. Niwa, T. Uenoyama, K. Ohnaka

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

A CMOS compatible bistable operation below 0.5V at room temperature is realized by means of a novel interband tunneling diode using Si material. This operation is achieved by the suppression of the current under the forward bias by introducing tunnel oxide. A possibility of multistate memory is demonstrated.

Original languageEnglish
Pages42-43
Number of pages2
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: 1998 Jun 221998 Jun 24

Other

OtherProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA
Period98/6/2298/6/24

ASJC Scopus subject areas

  • Engineering(all)

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