High performance bottom gate μc-Si TFT fabricated by microwave plasma CVD

Akihiko Hiroe, Akinobu Teramoto, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Deposition trend of μc-Si was investigated using microwave (2.45GH z) plasma enhanced CVD. μc-Si films with the preferential orientation of (111) and (220) were deposited and compared. Raman scattering results show that the (111) preferentially oriented film has higher crystallinity while ESR measurements result in the fact that the (220) preferentially oriented film has smaller dangling bond density. Bottom gate thin film transistors (TFT's) were fabricated using these μc-Si films as channel layer and evaluated. H2 plasma post-treatment has been found to be effective to improve the TFT characteristics. Mobility of about 1.4cm 2/Vsec and on/off ratio of more than 105 have been achieved.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
Pages307-312
Number of pages6
Publication statusPublished - 2008 Dec 1
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1066
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period08/3/2408/3/28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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