High performance bottom gate μc-Si TFT fabricated by low damage, high density plasma source

A. Hiroe, M. Hirayama, Y. Shirai, A. Teramoto, T. Ohmi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Low damage and high density microwave (2.45GHz) plasma source called CMEP (Cellular Microwave Excited Plasma) has been developed. Uniform and large area microwave plasma is realized by this plasma, source. Investigation of μc-Si deposition trend and fabrication of bottom gate TFT have been done using microwave plasma CVD. Hydrogen plasma post-treatment has been found to be important for improving the TFT characteristics. Mobility of about 1.4cm 2/Vsec and on/off ratio of more than 105 is achieved after hydrogen plasma treatment.

Original languageEnglish
Pages503-506
Number of pages4
Publication statusPublished - 2007 Dec 1
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5

Other

Other14th International Display Workshops, IDW '07
CountryJapan
CitySapporo
Period07/12/507/12/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Hiroe, A., Hirayama, M., Shirai, Y., Teramoto, A., & Ohmi, T. (2007). High performance bottom gate μc-Si TFT fabricated by low damage, high density plasma source. 503-506. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.