High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs

W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T. Ohmi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In this paper, the electrical characteristics of multi-gate MOSFETs (MUGFETs) using the advanced radical gate oxide and a suppression of Negative bias temperature degradation in accumulation mode FD-SOI MOSFETs are described. Firstly, we experimentally demonstrate that the multi-gate MOSFETs using radical oxide effectively suppress the degradation of S-factor values resulted from its superior oxidation at the sidewall. Secondly, we indicate that the device performance is dramatically improved by introducing MUGFETs device structure originated from its effective channel area. Finally, we reveal the improvement of current drivability and a suppression of Negative bias temperature instability (NBTI) in accumulation mode FD-SOI MOSFETs.

Original languageEnglish
Pages (from-to)2105-2108
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
Publication statusPublished - 2007 Sep 1

Keywords

  • Accumulation mode
  • Multi-gate MOSFETs
  • NBTI
  • Silicon on insulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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