High performance and high reliability dual metal CMOS gate stacks using novel high-k Bi-layer control technique

T. Ando, T. Hirano, K. Tai, S. Yamaguchi, K. Tanaka, I. Oshiyama, M. Nakata, K. Watanabe, R. Yamamoto, S. Kanda, Y. Tateshita, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, S. Toyoda, H. Kumigashira, M. Oshima, N. NagashimaS. Kadomura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The impacts of interfacial layer (IFL) thickness and crystallinity of HfO2/IFL bi-layer on electrical properties were clarified using synchrotron radiation photoemission spectroscopy (SRPES) and electrical measurements of nFETs (HfSix/HfO2) and pFETs (Ru/HfO 2) including BTI. It was found that crystallization of HfO 2 causes significant degradation in electron mobility and PBTI, whereas the impacts on hole mobility and NBTI are negligible. The SRPES measurement revealed that the crystallization temperature depends on HfO 2 thickness. We also found that the IFL thickness is the dominant factor for both electron mobility and PBTI. Therefore, a careful optimization of the HfO2/IFL bi-layer is indispensable. We proposed a novel technique for controlling the bi-layer thickness and demonstrated dual metal CMOS devices with high mobility and high reliability even by a post high-k process lower than 500°C for the very first time.

Original languageEnglish
Title of host publication2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)1424405858, 9781424405855
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China
Duration: 2007 Apr 232007 Apr 25

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Other

Other2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan, Province of China
CityHsinchu
Period07/4/2307/4/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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