High-performance and damage-free plasma etching processes for future ULSI patterning

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

Abstract

Novel etching techniques, such as the use of pulse-time-modulated plasma and a selective radical generation method ('radical injection method'), have been developed. The pulse-time-modulated plasma makes possible highly selective, high-rate, and charge-up-damage-free etching. And the new radical injection method using nonperfluorocarbon gases (CF3I and C2F4) in high-density plasma enables polymerization and etching rate to be controlled independently through the selective generation of CF2 and CF3 radicals in the plasma.

Original languageEnglish
Pages (from-to)69-76
Number of pages8
JournalMicroelectronic Engineering
Volume53
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes
Event25th International Conference on Micro- and Nano-Engineering - Rome, Italy
Duration: 1999 Sep 211999 Sep 23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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