High-performance and damage-free neutral-beam etching processes using negative ions in pulse-time-modulated plasma

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16 Citations (Scopus)

Abstract

For the past 30 years, plasma-etching technology has led efforts to shrink the patterns of ultralarge-scale integrated (ULSI) devices. However, inherent problems with plasma processes, such as charge build-up and UV photon radiation, have limited etching in the future devices. To overcome these and fabricate sub-50 nm devices in practice, neutral-beam etchings have been proposed. In this paper, we introduce damage-free etching processes using neutral beam with negative ions in pulse-time-modulated plasmas. These techniques can achieve damage-free etching processes. They are promising candidates for the practical technology that will be required to fabricate future devices.

Original languageEnglish
Pages (from-to)6681-6689
Number of pages9
JournalApplied Surface Science
Volume253
Issue number16
DOIs
Publication statusPublished - 2007 Jun 15

Keywords

  • Neutral beam
  • Plasma etching
  • ULSI

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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