A high performance 50 nm PMOSFET with 7-nm-deep ultra shallow junction is described. Ultra-low energy implantation of B10H14 + at 2 keV (effective energy of boron is 0.2 keV) which never causes transient enhanced diffusion (TED) is utilized for the extension formation. To prevent thermal diffusion (TD), we developed a 2-step activation annealing process (2-step AAP) which forms a shallow extension with a low temperature annealing after the deep source/drain (S/D) formation. The highest drive current of 0.40 mA/um ( Ioff of 1 nA/um and Vd = -1.8 V) which improves 15% as compared with published data is achieved. The smallest PMOSFET with a Leff of 38 nm is demonstrated for the first time. A low S/D series resistance Rsd of 760 ohm-urn is achieved even if using a high sheet resistance (>20 Kohm/sq) for the extension regions due to the diminished extension length.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|Publication status||Published - 1997 Dec 1|
|Event||1997 International Electron Devices Meeting - Washington, DC, USA|
Duration: 1997 Dec 7 → 1997 Dec 10
ASJC Scopus subject areas