High-performance 0.1-μm-gate enhancement-mode InAlAs/InGaAs HEMTs using two-step-recessed gate technology

Tetsuya Suemitsu, Haruki Yokoyama, Yohtaro Umeda, Takatomo Enoki, Yasunobu Ishii

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

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Engineering & Materials Science

Chemical Compounds