High performance λ/4 shifted MQW-DFB-DC-PBH-LDs and InGaAs dual PIN-PDs for Gbps coherent optical communication systems

Mitsuhiro Kitamura, Kenkoh Taguchi, Hiroyuki Yamazaki, Hirohito Yamada, Tsuyoshi Takeuchi, Shinji Takano, Kazuhiro Kosuge, Yuko Sugiyama, Ikuo Mito

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The authors demonstrate high performance single frequency quarter wave (λ/4) shifted Multiple-Quantum-Well Distributed Feedback Laser Diodes with Double Channel Planar Buried Heterostructure (MQW-DFB-DC-PBH-LDs) and InGaAs dual PIN-PDs. For MQW-DFB -DC-PBH-LDs, superior characteristics, such as narrow spectral linewidth and flat FM response at high light output power, have been obtained with small values of coupling coefficient and cavity length product (κL), and thick Separate Confinement Heterostructure (SCH) layers. For dual PIN-PDs, over 10 GHz high-speed response for up to 10 mW high input power condition has been obtained, for front-illuminated configuration. An estimated lifetime of over 105 hours has been obtained for both LDs and dual PIN-PDs, demonstrating that these devices are suitable for practical use in Gbps coherent optical fiber communication systems.

Original languageEnglish
Title of host publicationNEC Research and Development
Pages340-353
Number of pages14
Volume33
Edition3
Publication statusPublished - 1992 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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