The authors demonstrate high performance single frequency quarter wave (λ/4) shifted Multiple-Quantum-Well Distributed Feedback Laser Diodes with Double Channel Planar Buried Heterostructure (MQW-DFB-DC-PBH-LDs) and InGaAs dual PIN-PDs. For MQW-DFB -DC-PBH-LDs, superior characteristics, such as narrow spectral linewidth and flat FM response at high light output power, have been obtained with small values of coupling coefficient and cavity length product (κL), and thick Separate Confinement Heterostructure (SCH) layers. For dual PIN-PDs, over 10 GHz high-speed response for up to 10 mW high input power condition has been obtained, for front-illuminated configuration. An estimated lifetime of over 105 hours has been obtained for both LDs and dual PIN-PDs, demonstrating that these devices are suitable for practical use in Gbps coherent optical fiber communication systems.
|Title of host publication||NEC Research and Development|
|Number of pages||14|
|Publication status||Published - 1992 Jul 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering