High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers

Rintaro Koda, Tomoyuki Oki, Takao Miyajima, Hideki Watanabe, Shunsuke Kono, Masaru Kuramoto, Masao Ikeda, Hiroyuki Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


We present optical pulse generation with 100 W peak power, 3 ps temporal duration, and 1 GHz repetition from a GaInN master oscillator power amplifier (MOPA). An external cavity GaInN laser diode is passively mode-locked to generate 4 W peak power optical pulses as a master oscillator, and a semiconductor optical amplifier (SOA) effectively amplified these to a high peak power of more than 100 W. Two major factors that contributed to effective amplification of optical pulses were the generation of clean optical pulses without sub-pulse components by the GaInN mode-locked laser diode and suppression of amplified spontaneous emission in the SOA. This novel high-peak-power pulse source is used to induce multi-photon absorption to create sub-micrometer recording marks in a bulk plastic recording media. The realization of an all-semiconductor pulse source is a significant breakthrough towards a practical 3D optical data storage system.

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers X
Publication statusPublished - 2011 Mar 31
EventNovel In-Plane Semiconductor Lasers X - San Francisco, CA, United States
Duration: 2011 Jan 252011 Jan 28


OtherNovel In-Plane Semiconductor Lasers X
Country/TerritoryUnited States
CitySan Francisco, CA


  • GaInN
  • GaN
  • High peak power optical pulse
  • Mode-locked laser diode
  • Optical amplification
  • Optical data storage
  • Semiconductor optical amplifier
  • Two-photon absorption

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers'. Together they form a unique fingerprint.

Cite this