High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product

Koki Mukaiyama; Shinya Kasai; Yukiko K. Takahashi; Kouta Kondou; Yoshichika Otani; Seiji Mitani; Kazuhiro Hono

doi:10.7567/APEX.10.013008

High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product

Koki Mukaiyama, Shinya Kasai, Yukiko K. Takahashi, Kouta Kondou, Yoshichika Otani, Seiji Mitani, Kazuhiro Hono

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7 Citations (Scopus)

Abstract

Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8Ga0.2)Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance-area product RA of 0.14 ωμm2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5ωμm2. These MR performance characteristics of the MTJs with Cu(In0.8Ga0.2)Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in.2.

Original language	English
Article number	013008
Journal	Applied Physics Express
Volume	10
Issue number	1
DOIs	https://doi.org/10.7567/APEX.10.013008
Publication status	Published - 2017 Jan
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product",

abstract = "Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8Ga0.2)Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance-area product RA of 0.14 ωμm2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5ωμm2. These MR performance characteristics of the MTJs with Cu(In0.8Ga0.2)Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in.2.",

author = "Koki Mukaiyama and Shinya Kasai and Takahashi, {Yukiko K.} and Kouta Kondou and Yoshichika Otani and Seiji Mitani and Kazuhiro Hono",

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T1 - High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product

AU - Mukaiyama, Koki

AU - Kasai, Shinya

AU - Takahashi, Yukiko K.

AU - Kondou, Kouta

AU - Otani, Yoshichika

AU - Mitani, Seiji

AU - Hono, Kazuhiro

PY - 2017/1

Y1 - 2017/1

N2 - Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8Ga0.2)Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance-area product RA of 0.14 ωμm2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5ωμm2. These MR performance characteristics of the MTJs with Cu(In0.8Ga0.2)Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in.2.

AB - Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8Ga0.2)Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance-area product RA of 0.14 ωμm2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5ωμm2. These MR performance characteristics of the MTJs with Cu(In0.8Ga0.2)Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in.2.

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High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product

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