High-output-power deep ultraviolet light-emitting diode assembly using direct bonding

Masatsugu Ichikawa, Akira Fujioka, Takao Kosugi, Shinya Endo, Harunobu Sagawa, Hiroto Tamaki, Takashi Mukai, Miyuki Uomoto, Takehito Shimatsu

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We fabricated high-output-power 255 and 280nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding. The LEDs with lenses had a higher light extraction efficiency than conventionally structured LEDs. As a result, at a forward current of 350 mA, the output power of the 255nm LED increased by a factor of 2.8, reaching 73.6mW, while that of the 280nm LED increased by a factor of 2.3, reaching 153mW.

Original languageEnglish
Article number072101
JournalApplied Physics Express
Volume9
Issue number7
DOIs
Publication statusPublished - 2016 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Ichikawa, M., Fujioka, A., Kosugi, T., Endo, S., Sagawa, H., Tamaki, H., Mukai, T., Uomoto, M., & Shimatsu, T. (2016). High-output-power deep ultraviolet light-emitting diode assembly using direct bonding. Applied Physics Express, 9(7), [072101]. https://doi.org/10.7567/APEX.9.072101