High-mobility two-dimensional electron gas in an undoped heterostructure: Mobility enhancement after illumination

Tadashi Saku, Koji Muraki, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×106cm2/V·s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.

Original languageEnglish
Pages (from-to)L765-L767
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number7 PART A
Publication statusPublished - 1998 Jul 1
Externally publishedYes

Keywords

  • AlGaAs
  • Field-effect
  • GaAs
  • High mobility
  • Inverted heterostructure
  • Two-dimensional electron gas
  • Undoped

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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