High-mobility two-dimensional electron gas in an undoped heterostructure: Mobility enhancement after illumination

Tadashi Saku; Koji Muraki; Yoshiro Hirayama

High-mobility two-dimensional electron gas in an undoped heterostructure: Mobility enhancement after illumination

Tadashi Saku, Koji Muraki, Yoshiro Hirayama

Research output: Contribution to journal › Article › peer-review

Abstract

High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×10⁶cm²/V·s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.

Original language	English
Pages (from-to)	L765-L767
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	7 PART A
Publication status	Published - 1998 Jul 1
Externally published	Yes

Keywords

AlGaAs
Field-effect
GaAs
High mobility
Inverted heterostructure
Two-dimensional electron gas
Undoped

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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abstract = "High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×106cm2/V·s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.",

keywords = "AlGaAs, Field-effect, GaAs, High mobility, Inverted heterostructure, Two-dimensional electron gas, Undoped",

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year = "1998",

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T2 - Mobility enhancement after illumination

AU - Saku, Tadashi

AU - Muraki, Koji

AU - Hirayama, Yoshiro

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Y1 - 1998/7/1

N2 - High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×106cm2/V·s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.

AB - High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×106cm2/V·s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.

KW - AlGaAs

KW - Field-effect

KW - GaAs

KW - High mobility

KW - Inverted heterostructure

KW - Two-dimensional electron gas

KW - Undoped

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