Abstract
High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×106cm2/V·s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.
| Original language | English |
|---|---|
| Pages (from-to) | L765-L767 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 37 |
| Issue number | 7 PART A |
| Publication status | Published - 1998 Jul 1 |
| Externally published | Yes |
Keywords
- AlGaAs
- Field-effect
- GaAs
- High mobility
- Inverted heterostructure
- Two-dimensional electron gas
- Undoped
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)